RIE Reactive ion etching system
Applied materials:
Passivation layer: SiO2, SiNx
Backsilicon
Adhesive layer: TaN
Through hole: W
Feature:
1. Etching of passivation layer with or without holes;
2. Etching of adhesive layer;
3. Back silicon etching
Project configuration and machine structure diagram
Item
MD150-RIE
MD200-RIE
MD200C-RIE
Product size
≤6 inches
≤8 inches
≤8 inches
RF power source
0-300W/500W/1000W Adjustable,automatic matching
Molecular pump
-/620(L/s)/1300(L/s)/Custom
Antiseptic620(L/s)/1300(L/s)/Custom
Foreline pump
Mechanical pump/dry pump
Dry pump
Process pressure
Uncontrolled pressure/0-1Torr controlled pressure
Gas type
H/CH4/O2/N2/Ar/SF6/CF4/
CHF3/C4F8/NF3/Custom
(Up to 9 channels, no corrosive & toxic gas)
H2/CH4/O2/N2/Ar/F6/CF4/ CHF3/C4F8/NF3/Cl2/BCl3/HBr(Up to 9 channels)
Gas range
0~5sccm/50sccm/100sccm/200sccm/300sccm/500sccm/custom
LoadLock
Yes/No
Yes
Sample tem control
10°C~Room tem/-30°C~100°C/Custom
-30°C~100°C /Custom
Back helium cooling
Yes/No
Yes
Process cavity lining
Yes/No
Yes
Cavity wall tem control
No/Roomtem~60/120°C
Room tem-60/120°C
Control System
Auto/custom
Etching material
Silicon-based:Si/SiO2/SiNx···
IV-IV: SiC
Magnetic materials/alloy materials
Metallic material: Ni/Cr/Al/Au.....
Organic material: PR/PMMA/HDMS/Organic
film......
Silicon-based: Si/SiO2/SiNx......
III-V(注3): InP/GaAs/GaN......
IV-IV: SiC
II-VI (注3): CdTe......
Magnetic materials/alloy materials
Metallic material: Ni/Cr/A1/Au......
Organic material: PR/PMMA/HDMS /organic film...
Process result
Silicon-based material etching
Silicon-based materials, nano-imprint patterns, array
patterns and lens pattern etching
InP normal temperature etching
Pattern etching of InP based devices used in optical communication, including waveguide structure, resonant cavity structure ridge structure etc
SiC material etching
Suitable for microwave devices, power devices, etc
Physical sputtering, etching Organic materiale tching
|
It is applied to the etching of difficult to etch materials such as some metals (such as Ni / Cr) and ceramics, and the patternede tching of materials is realized by physical bombardment. |
It is used for etching and removal of organic compounds such as photoresist (PR)/ PMMA / HDMS / polymer |
Cermet film material (Au/Ni/Cr/Al2O3)
Display of failure analysis results：
Specification:
1. Prevent chips from flying
2. Minimum node that can be processed: 14nm;
3. SiO2/SiNx etching rate: 50~150 nm/min;
4. Etched surface roughness:<1 nm;
5. Support passivation layer, adhesion layer and back silicon etching;
6. Selection ratio of Cu/Al:>50
7. All-in-one machine LxWxH: 1300mmX750mmX950mm
8. Support one-click execution
