Product introduction:
The equipment is mainly used for the process coating of graphene and nano materials; Diffusion, oxidation and annealing of polycrystalline silicon and silicon carbide.
Main parameter:
structural style |
Horizontal, single-tube or multi-tube system automatic control |
Adapt to wafer size |
2-8″ |
Wafer delivery and retrieval method |
Automatic cantilever quartz push-pull boat, combined with manual chip taking and releasing. |
maximum temperature |
1050℃ |
working temperature |
400 ℃~850 ℃ continuously adjustable |
Single-point temperature stability |
400℃~850℃≤±0.5℃/24h |
System limit vacuum |
Better than 1Pa |
pumping speed |
Pumping time to limit vacuum < 15Min |
Working pressure range |
5Pa to 1 × 105Pa continuously adjustable |
Power supply |
3 phase 5-wire 380V±10%,50Hz |
cooling water |
2~4Kgf/cm²,8L/min; |